h cbc556/hcbc557/hcbc55 8(pnp) g eneral purpose transistor r eplacement type : bc556/bc557/bc5 58 fea t u r es ? low current ? high voltage ? complement to hc bc5 4 6, hc bc5 4 7, hc bc5 48 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit collector - base voltage bc546 v cbo - 80 v bc547 - 50 b c548 - 30 c ollector - emitter voltage bc546 v ceo - 65 v b c547 - 45 bc548 - 30 emi tter- base voltage bc546 v ebo -5 v b c547 -5 v b c548 -5 v collector current - continuous i c - 0.1 a collector power dissipation p c 625 mw t hermal resistance from junction to ambient r ja 200 /w j unction temperature t j 150 s torage temperature t stg - 55~ +150 to -92 1: co llector 2: base 3: emitter ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 1 / 6
h cbc556/hcbc557/hcbc55 8(pnp) general purpose transistor electrical characteristics (t a = 25c unless otherwise noted) cla ss if ic at ion of h fe ra nk 556 a 557 b 558 c ra n ge 110 - 220 200 - 450 420 - 800 parameter symbol te s t conditions min typ max unit collector -b ase b reakdown v oltage bc5 56 v cbo i c = - 0.1ma , i e =0 - 80 v bc5 57 - 50 bc5 58 - 30 collector -emitter b reakdown v oltage bc5 56 v ceo i c =-2ma, i b =0 - 65 v bc5 57 - 45 bc5 58 - 30 emitter-b ase b reakdown v oltage bc5 56 v ebo i e =- 10 0 a, i c =0 -5 v bc5 57 -5 bc5 58 -5 collector c ut - off c urrent bc5 56 i cbo v cb =- 70v, i e =0 - 0.1 a bc5 57 v cb =- 45 v, i e =0 - 0.1 a bc5 58 v cb =- 25 v, i e =0 - 0.1 a collector c ut - off c urrent bc5 56 i ceo v ce =- 60v, i b =0 - 0.1 a bc5 57 v ce =- 45v, i b =0 - 0.1 a bc5 58 v ce =- 20 v, i b =0 - 0.1 a emitter c ut - off c urrent i ebo v eb =- 5v, i c =0 0.1 a dc c urrent g ain h fe v ce =- 5v, i c =- 2ma 1 20 800 collector -emitter s aturation v oltage v ce(sat) i c =- 10ma, i b =- 0.5ma 0.3 v i c =- 100ma, i b =- 5ma 0.65 v base-emitter s aturation v oltage v be(sat) i c =- 10ma, i b =- 0.5ma 0.8 v i c =- 100ma, i b =- 5ma 1 v base-emitter v oltage v be v ce =- 5v, i c =- 2ma - 0.5 5 - 0.7 v v ce =- 5v, i c =- 10ma - 0. 8 v collector o utput c apacitance c ob v cb =- 10v, i e =0, f=1mhz 5 pf transition f requency f t v ce =- 5v, i c =- 10ma, f=100mhz 150 mhz ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 2 / 6
h cbc556/hcbc557/hcbc55 8(pnp) general purpose transistor typic al c ha racteristi cs ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 3 / 6 figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) 0.6 0.7 0.8 0.9 1.00.5 0 0.2 0.40.1 0.3 1.6 1.22.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collectoremitter voltage (v) vb , temperature coefficient (mv/ c) q 1.51.0 0.7 0.5 0.3 0.2 10 100 1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c 55 c to +125 c i c = 100 ma i c = 20 ma 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 i c = 200 ma i c = 50 ma i c = 10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. currentgain bandwidth product i c , collector current (madc) 0.4 1.0 80 100 200 300 400 6020 4030 7.05.0 3.0 2.0 0.5 c, capacitance (pf) f , currentgain bandwidth product (mhz) t t a = 25 c c ob c ib 0.6 1.0 2.0 4.0 6.0 10 20 30 40 150 1.0 2.0 3.0 5.0 10 20 30 50 v ce = 10 v t a = 25 c t a = 25 c 1.0
h cbc556/hcbc557/hcbc55 8(pnp) general purpose transistor ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 4 / 6 figure 7. dc current gain i c , collector current (amp) figure 8. aono voltage i c , collector current (ma) 0.8 1.00.6 0.2 0.4 1.0 2.0 0.1 1.0 10 200 0.2 0.2 0.5 0.2 1.0 10 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collectoremitter voltage (volts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t j = 25 c i c = 10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = 5.0 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.41.8 2.2 2.63.0 0.5 5.0 20 50 100 55 c to 125 c q vb for v be 2.0 5.0 20 50 100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. currentgain bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 5020 2010 6.04.0 1.0 10 100 v ce = 5.0 v c, capacitance (pf) f , currentgain bandwidth product t 0.5 5.0 20 t j = 25 c c ob c ib 8.0 50 ma 200 ma bc556/bc557/bc558 typical characteristics
h cbc556/hcbc557/hcbc55 8(pnp) general purpose transistor ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 5 / 6 symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions
h cbc556/hcbc557/hcbc55 8(pnp) general purpose transistor ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 6 / 6 to-92 package outline dimensions
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